Degradation induced formation of extended defects in GaP:N LED's

The light output degradation of commercial VPE GaP:N LED's was studied by monitoring minority carrier lifetime and deep level spectra. It was found that the decrease of the quantum efficiency can be completely accounted for by the formation of a nonradiative recombination center T
6
. T
6
is identified as a vacancy cluster, a model suggested by the formation-annihilation properties of this deep level.