Planar type vapor-phase epitaxial In0.53Ga0.47As photodiode

A punch-through type planar photodiode with low dark current and high speed response was fabricated from low carrier density In
0.53
Ga
0.47
As grown by vapor-phase epitaxy. Dark current density was 3.1 × 10
^-5
A/cm
²
at 10 V bias. Rise time and full width at half maximum were 82 and 126 psec, respectively, at a bias above 4 V.