IMMA applications to ion implantation in silicon-on-sapphire

Application of ion-microprobe mass analysis (IMMA) technique for the characterization of the silicon-on-sapphire (SOS) epitaxial layers and ion implantation in SOS axe described. A significantly high level of aluminum and oxygen concentration was observed in the thin (O.5-µm) epitaxial film. Ion-implant profiles of boron and phosphorus before and after high-temperature activation and oxidation procedures commonly used in SOS fabrication process are characterized and correlated to SUPREM calculations, spreading resistance, and resistivity measurements.