Nonradiative surface recombination in electron-beam pumped GaAs lasers

Measurements of threshold pumping power as a function of beam voltage and measurements of output power as a function of input power, with beam voltage as a parameter, strongly suggest that surface recombination contributes heavily to nonradiative transitions in electron-beam pumped GaAs lasers at voltages up to 30 kV, at both 4.2°K and 77°K.