4-12 GHz InP HEMT-based MMIC low-noise amplifier

In this paper, we present a monolithically integrated 3-stage low-noise amplifier working in the 4-12 GHz band. The circuit was fabricated on our in-house 0.2 /spl mu/m InP HEMT process using coplanar waveguide technology. In the band of interest, the fabricated amplifier shows an average noise figure of 1.25 dB and an average gain of 28 dB with a gain ripple of /spl plusmn/2 dB at room temperature. The total dc power consumption of the LNA is 41 mW. At a temperature of 10 K, an average gain of 27 dB and average noise temperature of 13 K was achieved, whereas the dc power consumption was reduced to 5.7 mW.