Static properties of the superconducting FET: Numerical analysis

A study of the feasibility of the superconducting FET using the high-T/sub c/ superconductors. Static properties are calculated using an equivalent circuit model. All superconductors are assumed to behave like BCS superconductors. The proximity effect is introduced from the phenomenological equation. Although the Schottky barrier effect at the superconductor-semiconductor interface is taken into account, this effect is found to be negligible. For the statics, a SFET made of all-copper-oxide materials seems to give a much longer transit time than that of a Nb-Si-Nb SFET due to low mobility of the normal conducting copper oxide assumed in this analysis. It is found, however, that a transit time of less than 1 ps can be attained if a material having a mobility as high as Si is used for the semiconductor layer.<
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