On-State Characteristics of SiC power UMOSFETs on 115-μm drift Layers

We describe the on-state performance of trench oxide-protected SiC UMOSFETs on 115-μm-thick n-type 4H-SiC epilayers designed for blocking voltages up to 14 kV. An on-state current density of 137 A/cm
²
and specific on-resistance of 228 m/spl Omega//spl middot/cm
²
are achieved at a gate bias of 40 V (oxide field of 2.67 MV/cm). The effect of current spreading on the specific on-resistance for finite-dimension devices is investigated, and appropriate corrections are made.