Comparison of oxide breakdown progression in ultra-thin oxide SOI and bulk pMOSFETs

Accelerated oxide breakdown progression in ultra-thin oxide (1.4 nm) SOI pMOSFETs is observed, as compared to bulk devices. The accelerated progression is explained by the increase of hole stress current as a result of breakdown induced channel carrier heating in a floating-body configuration. Numerical simulation of hole tunneling current and hot carrier luminescence measurement are carried out to justify the proposed theory.