A new single-pole-type head trimmed by focused ion beam at wafer level

We newly fabricated a trapezoidal main pole by focused ion beam (FIB) trimming method at wafer level. A layer of the main pole (MP) is FeCo/Ru multilayer made by sputtering. The thickness of the MP is 0.28 /spl mu/m, and Ta protective layer is 0.17 /spl mu/m thick. The taper angle of the MP is 10/spl deg/. It is very easy to control of the angle and the width of the MP by using this method. In addition, the manufacturing methods of the MP film are not limited, and the multilayered film is enabled. Moreover, the processing precision of MP by the FIB method became a very practicable result. The head, which had been made by this method, has good characteristics.