Self-aligned silicide technology for ultra-thin SIMOX MOSFETs

The salicide technology using rapid thermal annealing was applied to MOSFETs on thin-film SOI. Since the SOI film was limited to a thickness of less than 100 nm, the silicidation reaction between Ti and Si atoms on the SOI surface exhibited new features that depended on the initial thickness of the deposited Ti. There was an optimum thickness of as-deposited Ti on silicidation due to the restricted thickness of the Si layer. Beyond the optimum point, the region adjacent to the silicided Si layer works as a Si source to assure stoichiometric TiSi/sub 2/. The subthreshold slopes and carrier mobilities were not changed by the salicide process. Junction leakage characteristics were slightly degraded; however, the change was small enough for device application. The influence on AC characteristics was well demonstrated for a high-speed CMOS ring oscillator with a gate length of 0.7 mu m. The minimum delay time/stage was 46 ps/stage at 5 V. This gives 1.8 times higher speed operation than the controlled bulk CMOS ring oscillators with the same design rule.<
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