Lateral Ga/sub 0.47/In/sub 0.53/As and GaAs p-i-n photodetectors by self-aligned diffusion

Contact-self-aligned diffusion and compositional mixing has been utilized in the fabrication of lateral p-i-n photodetectors in Ga/sub 0.47/In/sub 0.53/As and GaAs for 1.3- and 0.85- mu m wavelength operation. The p-type contact and diffusion utilizes W(Zn) metallurgy and the n-type contact and diffusion utilizes MoGe/sub 2/ metallurgy. Bandwidths exceeding 7.5 and 18.0 GHz, respectively, have been obtained using these structures with bias voltages of approximately=5 V. The performance, ease of fabrication, and process compatibility make these devices suitable for integration in digital circuits employing field-effect transistors.<
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