Recent advances in GaN HEMT development

GaN HEMTs show great potential for RF applications. This paper provides an overview on the current status of GaN HEMT technology. It discusses the relevant properties of the AlGaN/GaN material system. Describes the evolution of GaN HEMTs during the last 10 years, and highlights the state of the art performance of these transistors. A comparison with competing HEMT type is made and the prospects of commercial GaN HEMTs are discussed.