InGaAs/GaAs 0.98 mu m semi-insulating blocked planar buried heterostructure lasers employing InGaAsP cladding layers

MOVPE-grown InGaAs/GaAs strained-layered lasers emitting at 0.98 mu m have been fabricated using InGaAsP as an alternative to AlGaAs in the cladding layers. Semi-insulating blocked planar buried heterostructure lasers 2.5 mu m wide have thresholds as low as 8 mA for 350 mu m long devices. With the addition of reflective coatings, slope efficiencies of 0.67 mW/mA and output powers of 60 mW at 160 mA have been obtained.<
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