Fabrication of heavily boron doped mechanical resonators

Heavily boron-doped single-crystalline silicon bridges have been fabricated and their resonances have been characterized. Silicon was doped with boron by shooting XeCl laser in BCl/sub 3/ precursor gas. Thanks to the high tensile stress induced by doping, the resonant frequency of the bridge shifted to more than 10 times higher than that of stress-free structure. Stress in the bridge (or the resonant frequency) can be controlled by changing the condition of doping.