Design of Low Power HS-14T SRAM cell and analysis for High-Speed Applications

The research presented in this paper explores various analytical methods for designing and optimizing SRAM (Static Random-Access Memory) cells, particularly for high-speed applications. The read, write, & hold margin performance of the 45 nm CMOS process-designed HS-14T SRAM cell is the main topic of discussion. We look closely at the Static Noise Margin (SNM), a crucial SRAM design parameter that greatly affects read and write operations. The SNM voltage, correlated with the threshold voltages of NMOS and PMOS transistors within SRAM cells, is evaluated to meet the demands of high-speed applications. We employed several butterfly curves to assess various SRAM cells’ noise margins (Read SNM, Write SNM, and Hold SNM). The proposed HS-14T SRAM cell demonstrated superior noise margins, with RSNM, WSNM, and HSNM measured at 61 mV, 458 mV, and 288 mV, respectively. These results indicate that the HS-14T SRAM cell offers enhanced readability and writing ability compared to other SRAM cells. The findings suggest that the proposed design is highly suitable for applications requiring high-speed and stable memory performance, significantly contributing to low-power, high-speed SRAM technology.