Design and Investigation of Junctionless N+ Pocket Doped Vertical-TFET with Binary Metal Alloy $P_{\alpha}Q_{1-\alpha}$

In this manuscript, the virtue of linear graded gate electrodes and SiGe heterojunction is utilized to design junctionless vertical TFET to achieve higher performance. A binary metal alloy is used instead of the single metal gate electrode to implement the linear graded electrode. The low band material SiGe enhances the ON current by increasing the tunneling current, while the linearly graded electrode improves the subthreshold slope by supporting abrupt decay in the slope of the tunneling bands. The designed device shows an improvement of 2 orders in the ON current and 76% in the subthreshold slope compared to the device with the single metal gate electrode. An improvement in the subthreshold slope along with high ON current is always needed to design fast switching logic.