Analysis Method of Dynamic Read Variation in a TFT-Type Synaptic Devices With Poly-Si Channel Structure

A novel method of analyzing the dynamic read variation (equivalent gate bias deviation [
$\delta $
(
${V}_{\text {G}}$
)] over a wide gate-voltage range of devices is proposed and applied to CMOS-compatible TFT-type synaptic devices with poly-Si channel. Since the proposed method of current sampling in a time domain or DC sweep shows a similar trend of
$\delta $
(
${V}_{\text {G}}$
) for any FET-like devices, read variation can be estimated simply with greatly reduced measurement time. In addition, the proposed method can be utilized to analyze the reliability characteristics of FET-like devices, which is a promising solution to the current need for innovative analysis methods required as the devices become smaller. Considering dynamic variations of the fabricated synaptic device, the quantized VGG9 network for CIFAR-10 image classification simulation shows a <0.1% accuracy drop compared to an ideal network without variation. Due to its simplicity and usability, the proposed method can be used for both commercial flash memory cells and neuromorphic computing devices.