Dielectric losses during CBD of silicon nitride nanopores

The exploration of controlled dielectric breakdown mechanism of silicon nitride membrane has been an extremely popular research content. In this paper, the circuit equivalent model of silicon nitride membrane in the process of dielectric breakdown was optimised, and the accuracy of the model was verified through the measurement of amplitude frequency and phase frequency characteristics by experiment. Then, by the change of power spectrum density (PSD), we demonstrated the loss of silicon nitride membrane in the breakdown process. Finally we used the low-voltage sinusoidal alternating current to reveal the frequency dependence of the membrane breakdown time and size, furthermore we tried to explain it through fatigue damage theory.