High Performance HfLaO-based TiO2-Channel FE V-NAND with High Consistency and Low Operation Voltage

A novel 3D vertical NAND (V-NAND) ferroelectric field-effect transistor (FeFET) array with TiO
2
channel and HfLaO ferroelectric layer has been demonstrated. The fabricated FeFETs exhibit excellent performances, including high device-to-device consistency of the stacked cells, low write voltage (±2V) with rapid write speed (<1μs), high on/off current ratio (>10
⁶
) and remarkable endurance (>10
⁸
). Moreover, effective string-level NAND operation of the fabricated V-NAND array has also been demonstrated.