A Novel Method for Extracting Asymmetric Source and Drain Resistance in IGZO Vertical Channel Transistors

Unlike conventional resistance extraction method, a novel method enabling to simply extract the source/drain resistance including contact resistance is, for the first time, hereby proposed in the IGZO vertical channel transistor (VCT). IGZO VCT has uneven source and drain structure inducing considerable asymmetricity in source and drain resistances, thus the extraction of them is very important. This method is based on the fact that the amount of current varies significantly depending on the direction of electron injection in the structure forming the schottky contacts. Experimental results show that this method is adequate to evaluate improvements in the contact resistance and thus applicable for source and drain resistance analysis in oxide semiconductor structures.