DRAM-Peri FinFET - A Thermally-Stable High-Performance Advanced CMOS RMG Platform with Mo-Based pWFM for sub-10nm DRAM

We report on an improved thermally-stable, high-performance CMOS RMG FinFET platform for DRAM-periphery beyond the 10nm node. This is a first demonstration of novel Mo and MoN work-function metal (WFM) integration into a high-performance dual-WFM + dual-dipole logic RMG flow, capable of enduring high thermal-budget linked to memory-array fabrication. We demonstrate superior N/P Vt balance compared to a TiN/TiAl dual-WFM + dual-dipole CMOS reference, as well as 0.12V PMOS Vt with Mo pWFM coupled with p-dipole down to scaled gate-lengths with excellent short-channel control.