First Heterogeneous and Monolithic 3D (HM3D) Integration of InGaAs HEMTs and InP/InGaAs DHBTs on Si CMOS for Next-Generation Wireless Communication

Heterogeneous and monolithic 3D (HM3D) integration of III-V and Si CMOS technologies enables high-frequency, multifunctionality, and power-efficient RF systems for next-generation wireless communication such as 6G and beyond. In this work, for the first time, we demonstrate HM3D integration of InGaAs HEMTs (for LNAs) and InP/InGaAs DHBTs (for PAs) on Si CMOS by direct wafer bonding. The top InGaAs HEMTs exhibit
$f_{\mathrm{T}}$
and
$f_{\text{MAX}}$
of 354 GHz and 611 GHz with a high
$g_{\mathrm{m}}$
of 1.5 S/mm. Concurrently, the top InP/InGaAs DHBTs show
$f_{\mathrm{T}}$
and
$f_{\text{MAX}}$
of 129 GHz and 47 GHz with a DC gain of 29 and a breakdown voltage of 5.9V. Notably, these results are obtained without any degradation of the bottom Si CMOS. This innovative HM3D integration, combining III-V technologies for PAs and LNAs with Si CMOS technology for analog/digital functionalities will play an essential role in next-generation wireless communication systems.