Filamentary Oxide-Based Memristors: A Journey Through Characterization, Reliability, and Applications

In this paper, a comprehensive analysis of filamentary oxide-based memristors is presented. The study includes the operational mechanisms of these devices, focusing on the complexities of filamentary resistive switching. Central to the discussion are issues associated with cycle-to-cycle variability and overall device reliability, which are crucial for the advancement of the memristive technology in practical applications. Moreover, the paper analyzes the use of memristors in real-world scenarios, particularly their role as electronic synapses. Their ability to emulate synaptic functions is demonstrated by features such as plasticity and multilevel conductance states, highlighting their potential for brain-inspired computational systems.