Advanced Piezo-Piezoresistive Sensor for Complex Electric Field Measurements in Cable Scenarios

In this paper, an electric field sensor based on piezoelectric-piezoresistive effect coupling is proposed, and a miniature, high-resolution and wide-range sensor device is investigated. The structure of the electric field sensor is designed, simulated and optimized by combining the key processes of piezoelectric effect, piezoresistive effect and MEMS(Micro-Electro-Mechanical System) technology. By physically coupling the mechanical deformation of the piezoelectric material caused by the electric field to the surface of the piezoresistive film, the piezoresistive film undergoes deformation and then causes a change in resistance, which realizes the purpose of measuring the electric field through the change in output voltage of the Wheatstone bridge. At the same time in the semiconductor piezoresistive film in a specific region of the ion doping, regulating the type of ion doping and ion doping concentration, can change the piezoresistive coefficient of a specific region, in order to play to improve the sensitivity of the sensor and accuracy of the effect. The sensor has great application prospects in the field of on-line monitoring of advanced electric fields in cable equipment, aerospace and other miniature sensing systems that require a portable advanced degree.