High-Field THz Source Centered at 2.6 THz

We present a semiconductor-based high-field terahertz (THz) source with a spectral peak at 2.6 THz. A peak field of 303 kV/cm is produced through optical rectification of a 0.57 mJ near-infrared (NIR) generation beam. A surface-etched grating allows a tilted-pulse-front phase matching geometry, optimizing THz generation >2 THz. This configuration has the potential to yield a THz peak field around 1 MV/cm when the ultrafast NIR laser delivers 5 mJ pulses. Our scheme enables the exploration of coherent control and nonlinear effects in the region between 2 THz and 4 THz.