Behavior Effect of Semiconductor 2D Dopants on Time Response of TMDC-MoS2 Based Schottky-Photodiode

SiC and GaN as 2D materials as well as Mos2 as a TMDC semiconducting material was chosen, a Shottky-photodiode based SiC/MoS2 composite as well as GaN/MoS
2
composite was fabricated, the resulted photodiode external quantum efficiency as well as internal quantum efficiency was compared to that of Mos
2
based photodiode and consequently the time response was also compared.