Regarding Spectrum Photosensitivity and Certain GaAs’s Structural Properties Heterostructures, Namely (GaAs)1-x-y(Ge2)x(ZnSe)y

The $\mathbf{n - G a A s - n + (G a A s)})_{1-x-y}(\mathbf{G e 2})_{\mathbf{x}}(\mathbf{Z n S e})_{\mathbf{y}}$ heterostructure’s spectrum photosensitivity, which was obtained from a Bi solution-melt on GaAs substrates, and the results of atomic force microscopy of an epitaxial film’s surface of the $(\mathbf{G a A s})_{1-y-x}(\mathrm{Ge2})_{y}(\mathbf{Z n S e}) \mathbf{x}$ solid solution are presented in this study. The photosensitivity of $\mathbf{n - G a A s}-\mathrm{n}+(\mathrm{GaAs})_{1-\mathrm{x}-}$ $\mathrm{y}(\mathrm{Ge} 2)_{\mathbf{x}}(\mathrm{ZnSe}) \mathrm{y}$ heterostructures covers the photon energy spectrum from 1.55 eV to 2.21 eV, with maxima at $2.7 \mathrm{eV}, 3.0$ eV, and 3.1 eV. The epitaxial film surface of $(\mathrm{GaAs})_{1-\mathrm{y}}$ $x(\mathrm{Ge} 2) y(\mathrm{ZnSe})$ displayed nanocrystallites with a height of about $5.9-6.4 \mathrm{~nm}$ and a base width of around $122-155 \mathrm{~nm}$. On the epitaxial film surface, there were around $2.510^{8} \mathrm{sm}^{-2}$ of nanocrystals. The spectral photosensitivity of these heterostructures is a measure of their response to different wavelengths of light. This property is crucial for applications in photodetectors, solar cells, and other optoelectronic devices, as it determines the efficiency with which these devices can convert light into electrical signals or vice versa.