A Compact D-Band Multiply-by-9 Frequency Multiplier with Inductor-Less Active Balun in 16nm p-FinFET Technology

This work presents a compact D-band multiply-by-9 frequency multiplier in TSMC 16nm technology, featuring the RF p-FinFET devices. The design includes elements such as an inductor-less active balun at the input stage, two frequency tripler cells, an inter-stage amplifier, and a 2-stage power amplifier (PA) at the output. The proposed frequency multiplier achieves 1.6-dB conversion gain, -2.8-dBm Psat, and 45-dB harmonic rejection ratio while taking a core area of only 0.068 mm
²
and DC power of 58 mW.