Growth of A-15 Nb3Ge by co-evaporation

Enhanced T
c
's (>21°K), T
c
widths and resistivity ratios result when controlled amounts of O
2
are admitted during film growth. O
2
levels ≈ 5 × 10
^-7
mm Hg stabilize the Nb
3
Ge phase over a wide range of Nb/Ge flux ratios for films grown at 6A/sec and 1000°C.