Enhanced NBIS Stability of Oxide Thin-Film Transistors by Using Terbium-Incorporated Alumina

Oxide thin-film transistors (TFTs) are suffering from negative bias illumination stress (NBIS) instability. In this work, a solution-processed terbium-incorporated alumina (AlTbO) interface modification layer is inserted between channel and dielectric to form efficient carrier transport interface and boost the NBIS stability of oxide TFTs. Notably, high content of Tb ions in AlTbO intercalation layer can enhance the charge transfer transition at the carrier transport interface, so the photoionization of oxygen vacancies in channel is suppressed. Based on the rational design of the active channel matrix with solution-processed Tb-doped indium oxide (Tb:In2O
$_{{3}}\text {)}$
semiconductor with 3% Tb concentration to realize superior carrier transport. Finally, the NBIS stability of Tb:In2O3 TFTs is greatly improved with a Vth shift of -0.67 V for 1800 s, and a high mobility of 23.6 cm2/V
$\cdot $
s with a threshold voltage (Vth) of 0.3 V is achieved. This strategy presents an efficient approach for fabricating high-performance and high-stability oxide TFTs.