Monolithically Integrated >3kV, 20A 4H-SiC BiDFET Utilizing an Accumulation Mode Channel for Improved Output Characteristics

This paper presents the first successfully demonstrated monolithically integrated
$> 3\text{kV}$
4H-SiC Bi-Directional FETs (BiDFETs) fabricated utilizing both accumulation-mode and inversion-mode channels. BiDFETs demonstrated enhanced output characteristics in both the forward
$(\mathrm{S}1\rightarrow \mathrm{S}2)$
and reverse
$(\mathrm{S}1\leftarrow \mathrm{S}2)$
directions, by employing the higher channel mobility and channel diode component of the accumulation-mode channel. This lower knee voltage, in conjunction with a
$\mathrm{R}_{\text{on,sp}}$
reduction for accumulation channels, led to a 9.6% reduction in overall
$\mathrm{V}_{(\mathrm{S}2-\mathrm{S}1)}$
at
$\mathrm{I}_{\mathrm{S}2-\mathrm{S}1)}=20\mathrm{A}$
, while also mimicking the blocking capabilities of the inversion-mode channel.