Electrical Properties of Epoxy-Nano Diamond Composite Films for Microelectronics Packaging Applications

Due to commercial demand for higher transistor densities and more output power needed for transportation electrification, thermal conductivity of die attach and encapsulating material are becoming an essential concern with respect to IC packaging architectures. In this paper we are presenting the electrical properties of epoxy-diamond composite in order to use them as encapsulant material for front side heat removal from power devices and very large scale integrated circuits(VLSI). The low frequency capacitance studies show that the dielectric constant of the epoxy was found to decrease with increase in frequency from 10KHz to 1MHz. At 100kHz, the dielectric constant of epoxy was found to be 4.51 and for epoxydiamond composite the dielectric constant was 4.56. The dissipation factor for both films were found to be temperature dependent and the maximum dissipation was 0.035. High frequency characterization with network analyzer shows that both films show a dissipation factor of less than 0.05 up to 1.5 GHz. The current vs voltage measurements show that the leakage current increases with increase in temperature for both the samples.