Multiple P-Type SiC Micro-Island as Junction Termination Extension for 4H-SiC Schottky Barrier Diode

The letter investigated the design of junction termination extension structures with uniformly and non-uniformly distributed multiple P-type SiC micro-islands in 4H-SiC based Schottky Barrier Diode (SBD). By adjusting the length (LP), spacing (SP), number of islands (NP), and trapezoidal tilt angle (
$\theta $
) of the micro-islands, the reverse performance of the devices is effectively optimized. Merging simulation with experimental methodologies, the performance of the SBD devices with varying terminal structures was analyzed. Simulation results indicate that a uniform distribution of multiple P-type micro-islands, particularly with L
$_{\text {P}} = 13~\mu $
m, S
$_{\text {P}} = 3~\mu $
m, and N
$_{\text {P}} =6$
, exhibits a more uniform electric field distribution under reverse voltage of 1200 V and a higher terminal efficiency (exceeding 90%), while also saving more than 19% of the terminal area if compared to the non-uniform multiple P-island configurations. Furthermore, by changing the
$\theta $
, the reverse performance of SBD devices and terminal efficiency can be affected with
$\theta = 12^{\circ }$
, producing the best outcome.