Amorphous IGZO-Based 1T0C Charge-Trapping RAM with Excellent Retention

This paper presents a novel 1T0C IGZO-based charge-trapping (CT) RAM with highly extended retention (2000s). A comprehensive device model is established and calibrated against the experimental data to evaluate the device mechanism and scaling potential. The memory window remains robust when the gate length is scaled down to 50 nm. This CT-RAM demonstrates excellent scaling potential and back-end-of-line (BEOL) compatibility for memory applications.