Investigation of the Carrier Velocity in Short Channel Ge MOSFET with NiGe Metal Source/Drain

Schottky barrier MOSFETs have attracted attention as a candidate for achieving high-performance MOSFETs. In the short channel MOSFETs with metal source/drain, the velocity overshoot phenomenon exists. In this article, we analyze the carrier velocity in the short-channel Ge pMOSFETs with metal source/drain. The velocity overshoot phenomenon becomes more obvious with the decrease in channel length. At the same time, it is also shown that with the same channel length, the relationship of carrier velocity and vertical electric field.