Potential Confusion in the Analysis of the Current-Voltage Characteristics of High-K Dielectric on Lightly Doped P-Type Silicon MIS Capacitors

In this paper, the author will explain the potential confusion in the analysis of high-k MIS capacitor structures on lightly doped p-type silicon. The confusion comes from the possibility of the formation of an induced pn junction in lightly doped p-type silicon. Peripheral inversion and optical illumination can be important. An MISFET structure is a better test structure without such a problem.