Load-line Dependent Current Filament Dynamics in N anoscale SCR Devices

In this paper physics of experimentally observed abnormal behavior in STI bounded Silicon-Controlled-Rectifier (SCR) structures is investigated and explained using basic principles and 3D electrothermal TCAD simulations. The SCR device is found to show pulse to pulse instability in the negative resistance (snapback) region during the lOOns pulse width TLP measurement. The instabilities were independent of SCR geometrical design variations but were dependent on the load line conditions used in the TLP measurement. The physical insights and device physics has been explored using well calibrated 3
$D$
process and device TCAD.