An Enhanced Passive IGBT Driver Technology Based on Multi-stage Regulation

Large drive resistors are often used in conventional gate driver to suppress current overshoot and voltage overshoot of power devices, but this will increase the switching losses. In order to achieve simultaneous optimization of electrical stresses and switching losses, this paper proposes an enhanced voltage source drive technology (EVGD), which can avoid building a complex IGBT model and using too many high-speed devices. EVGD is able to control the slope of voltage and current at turn-on stage and turn-off stage. With the driver resistance as the common branch, a new circuit is constructed through the parasitic inductance of the triode and power device. The
$(di_{\mathrm{c}}/\mathrm{d}t$
and
$\mathrm{d}v_{\mathrm{c}\mathrm{e}}/\mathrm{d}t$
of the power device are controlled by applying additional equivalent voltage sources at different switching transient stages. The proposed technique enables simultaneous optimization of switching losses and electrical stresses without the need for high cost components. The proposed method is experimentally verified on IGBT(IKW75N60T) in the double-pulse test. The current overshoot and voltage overshoot can be reduced by 12.0% and 14.5% respectively. Turn-on losses and turn-off losses can be reduced by 4.16% and 7.6% respectively.