Ohmic Au-MoS2 Contacts Enabled by Re Adsorbed MoS2 Source/Drain Regions: An Ab-initio Quantum Transport Study

This study delves into the improved transport properties of 2D MoS
2
devices with metal contacts achieved through substitutional doping or adsorbed metals. We employed ab initio techniques to thoroughly examine electronic transport behavior. The incorporation of metals into MoS
2
is aimed at enhancing device performance and streamlining charge carrier transport. Our results illuminate the influence of doping on electronic and transport properties, offering valuable guidance for optimizing high-performance 2D metal contact in MoS
2
electronic devices.