Light-Induced Static and Dynamic Magnetization Modulation in Magnetoelectric Heterostructure for Beyond-CMOS Devices

This study explores a novel approach in magnetoelectric (ME) heterostructure, addressing challenges associated with its high operational electric fields and intricate electrical contacts. By utilizing light-induced internal electric fields, both static and dynamic magnetization modulation in ME heterostructure is observed. The magnetoresistance and bidirectional ferromagnetic resonance shifts, indicating localized static and dynamic magnetization control is observed. This work can provide a framework for optically controlled ME-based memory, signal processing, and communication devices.