Impact of Sb Variation and Electric Field on InAs/Ga(As)Sb Superlattice Structures

This work presents the analysis of wavefunctions and miniband-formation in a 150-well $\mathrm{InAs/GaAs}_{1-x} \mathrm{Sb}_{x}$ based superlattice structure. A type-I to type-II transition is observed at an Sb mole fraction (x) of 0.15, which facilitates the use of the same material-based structures to accommodate multiple applications in light emission and detection. Further, the effects of an applied electric field on the band diagram and electron wave-functions were studied.