An Interpretable Symbolic Regression Model for Prediction of GaN Vertical Power MOSFET Failsafe Boundaries

In this work, a symbolic regression (SR) model has been developed to predict the GaN Fin-MOSFET channel potential profile, particularly at the blocking modes. This model precisely predicts the source-drain barrier which is a pivotal aspect of failsafe device operation. The SR model explains the dependency of different input parameters on the output response of interest. This work is first to report an interpretable approach for quantifying the device design of GaN vertical power transistors for a robust circuit design.