Design of a Shielded-Gate TMBS

In order to solved the problem of Schottky Barrier Diodes (SBD) with large reverse leakage current and low breakdown voltage, the shielded-gate trench MOS Schottky diode (SG-TMBS) was designed. Effectively reduced the maximum electric field inside the device by using a shielded gate structure and ion implantation at the bottom of the trench. Surface ion implantation effectively prevented reduction of Schottky barrier height, which could significantly reduced the reverse leakage current of the device while improving the breakdown voltage. The simulation results showed that the reverse leakage current of the device was about 0.515 μA when the test voltage was 100V. The breakdown voltage was about 132V when the test current was 0.1mA. The shielded-gate TMBS has higher breakdown voltage and lower reverse leakage current than the conventional TMBS.