Study on the failure mechanism and characteristics of electrochemical migration of electronic package structures in humid environment

As the trend of miniaturization in the microelectronics industry continues, the adverse effects of electrochemical migration on devices are becoming increasingly significant, particularly in humid environments. These issues, manifested as short-circuits caused by dendritic growth, have a profound impact on device performance, efficiency, and lifespan. Hence, the necessity to study the dynamic characteristics of ion electrochemical migration and dendrite formation in electronic devices is paramount to enhance device reliability and longevity. To this end, this study introduces an innovative approach that considers the role of electrolyte melting in dendritic growth under low-temperature environments, a factor overlooked in previous models. This study employs a two-dimensional multiphysical finite element method model, grounded in Fick's mass diffusion theory, Nernst-Planck theory, Nernst-Einstein equation, and the electric-heat-concentration effect, to investigate the failure mechanism and dynamic characteristics of ion electrochemical migration in electronic packaging devices. Furthermore, the level set mathematical method is utilized to track changes in dendrite morphology, establishing an equation for the interface motion between the electrolyte and dendrite. This innovative approach accounts for the boundary movement of the model, induced by dendrite formation via ion diffusion electrodeposition at the cathode side. Our results reveal that upon application of bias voltage, an electrochemical reaction triggers ion diffusion from the anode to the cathode, creating a notable ion concentration gradient. This leads to the gradual formation and extension of dendrites towards the anode. When dendrites reach the anode, the device risks short-circuit failure. Our model predicts a device failure time of approximately 1769s, offering a valuable tool for enhancing the reliability and lifespan of microelectronic devices under various environmental conditions.