Effect of Zr4+ doping on electrical property of BaTiO3-based MLCC with high-voltage

The effect of Zr
⁴⁺
on the dielectric properties of
^BaTiO
3 (BT) based high-voltage multilayer ceramic capacitor (MLCC) is systematically investigated in this study. The results show that the grain size of BT changes with Zr
⁴⁺
doping modification concentrations. The phase structure of the sample exhibits a relaxed ferroelectric phase transition behavior under the control of Zr
⁴⁺
, and the dielectric properties of the tetragonal phase also changed. Due to the introduction of Zr
⁴⁺
dopants, the formed internal micro electric field blocks the movement of electric domains in the relaxation shell region. Further analysis from the first order reversal curves (FORC) image shows that the ratio of reversible to irreversible domains in the sample BT grains varies dynamically under the influence of Zr
⁴⁺
, and it is mainly the reversible domains that contribute to the dielectric constant. In particular, the inversion of the tetragonal domain is driven by the applied dc bias voltage, which causes the dielectric constant at higher Zr
⁴⁺
content to drop rapidly until it becomes stable. Under the influence of Zr
⁴⁺
, the convergence of dielectric constant curve changes with ac bias voltages, and the relative dielectric constant remains stable with different ac voltages. Our research has deepened the mechanism of Zr
⁴⁺
doping on the phase structure and electrical properties of BT grains, and provides theoretical guidance for the development of MLCC devices with excellent dielectric properties.