Influence of the Doping Level of Silicon on its Optical and Recombination Parameters Measured with the Nondestructive Photothermal Radiometry Method

In this paper results of modulated photothermal radiometry (PTR) measurements and analyses of a series of phosphorus doped silicon samples are presented and discussed. Phosphorus concentration in the investigated samples changed from $4.3\cdot 10 ^{11}$ cm $^{-3}$ to $1.9\cdot 10 ^{18}$ cm $^{-3}$. It corresponded to the specific resistance changes of the samples from $10000 \Omega \cdot$ cm to $0.16 \Omega \cdot$ cm respectively. The goal of the study was to investigate the possibility of determination of the influence of the doping level of silicon on its optical absorption coefficient in the infrared region, minority carrier lifetime and the thermal parameters measured with the nondestructive PTR method.