Analysis of Effects of Aging on the Accuracy of Analog Computing-In-Memory Computation

This paper presents aging simulation studies on an 8T-SRAM based Analog Computing-In-Memory (ACIM) circuit in the 65nm CMOS technology. Our methodology integrates device-level aging models and circuit simulations in SPICE. We assess the impact of Hot Carrier Injection (HCI) and Negative Bias Temperature Instability (NBTI) reliability degradation mechanisms on the accuracy of ACIM. The results reveal that aging effects amplify computational errors, with HCI in NMOS devices within the 2T path demonstrating a more pronounced aging-induced degradation compared to NBTI.