The Impact of Operation Conditions on Potentiation, Depression and Endurance Dynamics of Tantalum Oxide RRAMs

Resistive Random Access Memory (RRAM) devices hold promise as a key enabler technology for energy-efficient, in-memory, and brain-inspired computing paradigms, with the potential to significantly enhance high-performance computing applications. However, the widespread adoption of RRAM technology in high-performance computing applications is hindered by non-ideal device metrics and various reliability challenges. RRAM devices are reported to exhibit critical device-to-device (D2D) and cycle-to-cycle (C2C) variability. In this paper, we investigate D2D and C2C variabilities of Tantalum Oxide RRAM devices and explore potentiation, depression, and endurance dynamics under varying operation conditions. Our ultimate goal is to address performance and reliability issues associated with the oxide-based RRAM device technology and facilitate its broader implementation in future computing applications.