Comprehensive Study of Optical Float-Zone Grown Gallium Oxide Schottky Barrier Diode

β-Ga
2
O
3
based lateral Schottky barrier diodes are fabricated using Ni/Au as Schottky contact and Ti/Au as Ohmic contact. The Sn-doped β-Ga
2
O
3
sample is grown by the optical float-zone technique. The effect of trenches, which are used for mesa isolation, on break-down voltage is investigated. The device shows near-ideal characteristics in terms of built-in potential. The parasitic series and shunt resistance are extracted, and their dependency on temperature is established. Comprehensive modeling of temperature-dependent reverse leakage current is demonstrated using the thermionic emission (TE) model, Poole-Frenkel (PF) emission model, and Fowler-Nordheim (FN) tun-neling mechanism. The procedure to extract relevant parameters is explained in terms of bias and temperature dependency. The combined model shows excellent agreement with experimental data over a wide range of bias and temperature. The maximum electric field of 2.3 MV/cm is achieved.