A High-Gain Ku-Band Low Noise Amplifier (LNA) with Ultra-Low Noise Figure

In this work, we propose a Ku-band low noise amplifier (LNA) that employs a small signal equivalent circuit model of high-electron-mobility transistor (HEMT). The design uses a conventional capacitive feedback matching network technique that maximizes the gains and minimizing noise figure (NF), input, output, and isolation losses. Gallium nitride (GaN) HEMT technology is used, which aids in developing a low-noise figure and guarantees the compatibility of the developed LNA for Ku-band space utilization. The proposed LNA based on GaN HEMT de-sign offers gain values of 38.6 dB and 33.4 dB, respectively, at 12 GHz and 18 GHz, with extremely low noise figures of 0.90 dB and 1.01 dB. The input and output return losses over the complete band of operation are better than 12 dB. Notably, for the desired frequency range of 12-18 GHz, the K and Mu values are more significant than unity. The Keysight advanced design system (ADS) is used for performing simulations.